Characterization of Sandwiched MIM Capacitors Under DC and AC Stresses: Al2O3-HfO2-Al2O3Versus SiO2-HfO2-SiO2
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چکیده
منابع مشابه
Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 layers sandwiched between thicker SiO2 layers
There has been a search for alternative dielectrics with significantly increased dielectric constants, K, which increases physical thickness in proportion to K, and therefore would significantly reduce direct tunneling. However, increases in K to values of 15–25 in transition metal and rare earth oxides are generally accompanied by decreases in the conduction band offset energy with respect to ...
متن کاملNanoscale electrical characterization of HfO2/SiO2 MOS gate stacks with enhanced - CAFM
2.Introduction The replacement in MOS devices of the so far almost perfect SiO2 by another material with a higher dielectric constant (high-k) has been proposed as a solution to the increase in gate current associated to device dimensions shrinking [1]. However, before the effective substitution of SiO2 in commercial IC’s, the electrical properties and reliability of these materials must be wel...
متن کاملEnhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 (ZrO2) layers sandwiched between thicker SiO2 layers
There has been a search for alternative dielectrics with significantly increased dielectric constants, K, which increases in physical thickness proportional to K, and therefore would significantly reduce direct tunneling. However, increases in k to values of 15–25 in transition metal and rare earth oxides are generally accompanied by decreases in the conduction band offset energy with respect t...
متن کاملALD HfO2, Al2O3, and PECVD Si3N4 as MIM Capacitor Dielectric for GaAs HBT Technology
Characterization was performed on 60 nm +/3 nm films of atomic layer deposition (ALD) hafnium dioxide (HfO2) and aluminum oxide (Al2O3), and plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (Si3N4) as MIM capacitor dielectric for GaAs HBT technology. The capacitance density of MIM capacitor with ALD HfO2 (2.73 fF/m 2 ) and Al2O3 (1.55 fF/m 2 ) is significantly higher than tha...
متن کاملTemperature (5.6-300K) Dependence Comparison of Carrier Transport Mechanisms in HfO2/SiO2 and SiO2 MOS Gate Stacks
Temperature dependent measurements have been used to examine transport mechanisms and energy band structure in MOS devices. In this study, a comparison between high-k HfO2 dielectrics and conventional SiO2 dielectrics is made to investigate dielectric specific thermally activated mechanisms. Temperature dependent measurements on large area n/pMOSFETs composed of SiO2 and HfO2/SiO2 gate dielectr...
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ژورنال
عنوان ژورنال: Journal of the Korean Institute of Electrical and Electronic Material Engineers
سال: 2011
ISSN: 1226-7945
DOI: 10.4313/jkem.2011.24.12.939